OPTICAL FUNCTIONS OF SILICON BETWEEN 1.7 AND 4.7 EV AT ELEVATED-TEMPERATURES

[1] Algazin Yu. B., 1978, Optics and Spectroscopy, V45, P183

[2] ALLEN PB, 1981, PHYS REV B, V24, P7479, DOI 10.1103/PhysRevB.24.7479

[3] THEORY OF THE TEMPERATURE-DEPENDENCE OF THE DIRECT GAP OF GERMANIUM [J]. PHYSICAL REVIEW B, 1981, 23 (04): : 1495 - 1505

[4] Antoncik E., 1955, CZECH J PHYS, V5, P449

[5] SPECTROSCOPIC ANALYSIS OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) : 1359 - 1365

[6] TEMPERATURE EFFECTS IN SCHOTTKY-BARRIER SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1976, 29 (04) : 257 - 259

[7] TEMPERATURE-DEPENDENCE OF BAND-GAP OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1846 - 1848

[8] BROOKS H, UNPUB

[9] Brooks H., 1955, ADV ELECTRON, V7, P85

[10] COHEN ML, 1980, HDB SEMICONDUCTORS B, V2, pCH4

[1] Algazin Yu. B., 1978, Optics and Spectroscopy, V45, P183

[2] ALLEN PB, 1981, PHYS REV B, V24, P7479, DOI 10.1103/PhysRevB.24.7479

[3] THEORY OF THE TEMPERATURE-DEPENDENCE OF THE DIRECT GAP OF GERMANIUM [J]. PHYSICAL REVIEW B, 1981, 23 (04): : 1495 - 1505

[4] Antoncik E., 1955, CZECH J PHYS, V5, P449

[5] SPECTROSCOPIC ANALYSIS OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) : 1359 - 1365

[6] TEMPERATURE EFFECTS IN SCHOTTKY-BARRIER SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1976, 29 (04) : 257 - 259

[7] TEMPERATURE-DEPENDENCE OF BAND-GAP OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1846 - 1848

[8] BROOKS H, UNPUB

[9] Brooks H., 1955, ADV ELECTRON, V7, P85

[10] COHEN ML, 1980, HDB SEMICONDUCTORS B, V2, pCH4