OPTICAL FUNCTIONS OF SILICON BETWEEN 1.7 AND 4.7 EV AT ELEVATED-TEMPERATURES

[31] STANDARD THERMODYNAMIC FUNCTIONS FOR FORMATION OF ELECTRONS AND HOLES IN GE, SI, GAAS, AND GAP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) : 1133 - 1141

[32] DESIGN AND OPERATION OF AN AUTOMATED, HIGH-TEMPERATURE ELLIPSOMETER [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1974, 64 (06) : 804 - 811

[33] ENTROPY OF IONIZATION AND TEMPERATURE-VARIATION OF IONIZATION LEVELS OF DEFECTS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1976, 14 (08): : 3539 - 3550

[34] TEMPERATURE DEPENDENCE OF ENERGY GAP IN SEMICONDUCTORS [J]. PHYSICA, 1967, 34 (01): : 149 - &

[35] TEMPERATURE EFFECTS IN SCHOTTKY-BARRIER SILICON SOLAR CELLS [J]. APPLIED PHYSICS LETTERS, 1975, 26 (12) : 707 - 709

[36] TEMPERATURE DEPENDENCE OF WAVELENGTH-MODULATION SPECTRA OF GAAS [J]. PHYSICAL REVIEW LETTERS, 1970, 24 (03) : 102 - &

[37] TEMPERATURE-DEPENDENCE OF THE OPTICAL-PROPERTIES OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1491 - 1493

[38] Wood R. F., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P67

[39] Wood R. F., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P61

[40] Yu S.C, 1967, THESIS HARVARD U

[31] STANDARD THERMODYNAMIC FUNCTIONS FOR FORMATION OF ELECTRONS AND HOLES IN GE, SI, GAAS, AND GAP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) : 1133 - 1141

[32] DESIGN AND OPERATION OF AN AUTOMATED, HIGH-TEMPERATURE ELLIPSOMETER [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1974, 64 (06) : 804 - 811

[33] ENTROPY OF IONIZATION AND TEMPERATURE-VARIATION OF IONIZATION LEVELS OF DEFECTS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1976, 14 (08): : 3539 - 3550

[34] TEMPERATURE DEPENDENCE OF ENERGY GAP IN SEMICONDUCTORS [J]. PHYSICA, 1967, 34 (01): : 149 - &

[35] TEMPERATURE EFFECTS IN SCHOTTKY-BARRIER SILICON SOLAR CELLS [J]. APPLIED PHYSICS LETTERS, 1975, 26 (12) : 707 - 709

[36] TEMPERATURE DEPENDENCE OF WAVELENGTH-MODULATION SPECTRA OF GAAS [J]. PHYSICAL REVIEW LETTERS, 1970, 24 (03) : 102 - &

[37] TEMPERATURE-DEPENDENCE OF THE OPTICAL-PROPERTIES OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1491 - 1493

[38] Wood R. F., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P67

[39] Wood R. F., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P61

[40] Yu S.C, 1967, THESIS HARVARD U