TEMPERATURE EFFECTS IN SCHOTTKY-BARRIER SILICON SOLAR CELLS

被引：40

作者：

VERNON, SM ^{[1
]}

ANDERSON, WA ^{[1
]}

机构：

[1] RUTGERS STATE UNIV,DEPT ELECT ENGN,NEW BRUNSWICK,NJ 08903

来源：

APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 12期

关键词：

D O I：

10.1063/1.88044

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：707 / 709

页数：3

共 13 条

[1] SILICON SURFACE-BARRIER PHOTOCELLS [J].

AHLSTROM, E ;

GARTNER, WW .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) :2602-+

[2] 8 PERCENT EFFICIENT LAYERED SCHOTTKY-BARRIER SOLAR CELL [J].

ANDERSON, WA ;

DELAHOY, AE ;

MILANO, RA .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3913-3915

[3]

BRODER J, 1964, 4TH P IEEE PHOT SPEC

[4] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J].

CROWELL, CR .

SOLID-STATE ELECTRONICS, 1965, 8 (04) :395-&

[5]

PRINCE M, 1968, APPLIED SOLID STATE

[6] SCHOTTKY-BARRIER SOLAR-CELL CALCULATIONS [J].

PULFREY, DL ;

MCOUAT, RF .

APPLIED PHYSICS LETTERS, 1974, 24 (04) :167-169

[7] PHYSICS OF SCHOTTKY BARRIERS [J].

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1970, 3 (08) :1153-+

[8] AN EVALUATION OF PHOTOVOLTAIC DEVICES FOR FUTURE SPACECRAFT POWER DEMANDS [J].

RITCHIE, DW ;

SANDSTRO.JD .

ENERGY CONVERSION, 1969, 9 (03) :83-&

[9]

SANDSTROM JD, 1967, 6TH P IEEE PHOT SPEC, P199

[10] FORWARD CURRENT-VOLTAGE CHARACTERISTICS OF SCHOTTKY BARRIERS ON N-TYPE SILICON [J].

SAXENA, AN .

SURFACE SCIENCE, 1969, 13 (01) :151-+

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