SILICON SURFACE-BARRIER PHOTOCELLS

[1] AHLSTROM E, 1958, 1958 IRE EL DEV M WA

[2] [Anonymous], 1955, J APPL PHYS, DOI [10.1063/1.1722034, DOI 10.1063/1.1722034]

[3] UNIFORM SILICON P-N JUNCTIONS .1. BROAD AREA BREAKDOWN [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) : 1153 - 1160

[4] HIGH INVERSE VOLTAGE GERMANIUM RECTIFIERS [J]. JOURNAL OF APPLIED PHYSICS, 1949, 20 (08) : 804 - 815

[5] BLANKENSHIP JL, 1961, IRE T, VNS8, P17

[6] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS [J]. PHYSICAL REVIEW, 1958, 109 (03): : 695 - 710

[7] BROWN WL, 1961, IRE T NUCL SCI, VNS8, P2

[8] MICROPLASMA FLUCTUATIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (07) : 1039 - 1050

[9] A NEW SILICON P-N JUNCTION PHOTOCELL FOR CONVERTING SOLAR RADIATION INTO ELECTRICAL POWER [J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (05) : 676 - 677

[10] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1956, 102 (02): : 369 - 376

[1] AHLSTROM E, 1958, 1958 IRE EL DEV M WA

[2] [Anonymous], 1955, J APPL PHYS, DOI [10.1063/1.1722034, DOI 10.1063/1.1722034]

[3] UNIFORM SILICON P-N JUNCTIONS .1. BROAD AREA BREAKDOWN [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) : 1153 - 1160

[4] HIGH INVERSE VOLTAGE GERMANIUM RECTIFIERS [J]. JOURNAL OF APPLIED PHYSICS, 1949, 20 (08) : 804 - 815

[5] BLANKENSHIP JL, 1961, IRE T, VNS8, P17

[6] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS [J]. PHYSICAL REVIEW, 1958, 109 (03): : 695 - 710

[7] BROWN WL, 1961, IRE T NUCL SCI, VNS8, P2

[8] MICROPLASMA FLUCTUATIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (07) : 1039 - 1050

[9] A NEW SILICON P-N JUNCTION PHOTOCELL FOR CONVERTING SOLAR RADIATION INTO ELECTRICAL POWER [J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (05) : 676 - 677

[10] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1956, 102 (02): : 369 - 376