PLANAR EMBEDDED INP/GAINAS P-I-N PHOTODIODE FOR VERY HIGH-SPEED OPERATION

被引：7

作者：

MIURA, S

KUWATSUKA, H

MIKAWA, T

WADA, O

机构：

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1987年 / 5卷 / 10期

关键词：

D O I：

10.1109/JLT.1987.1075423

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1371 / 1376

页数：6

共 17 条

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[4]

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[8] MONOLITHIC INTEGRATION OF A PIN PHOTODIODE AND A FIELD-EFFECT TRANSISTOR USING A NEW FABRICATION TECHNIQUE - GRADED STEP PROCESS [J].

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[9] PLANAR, EMBEDDED INP/GALNASP-I-N PHOTODIODE WITH VERY HIGH-SPEED RESPONSE CHARACTERISTICS [J].

MIURA, S ;

KUWATSUKA, H ;

MIKAWA, T ;

WADA, O .

APPLIED PHYSICS LETTERS, 1986, 49 (22) :1522-1524

[10] OPTOELECTRONIC INTEGRATED ALGAAS GAAS P-I-N FIELD-EFFECT TRANSISTOR WITH AN EMBEDDED, PLANAR P-I-N PHOTODIODE [J].

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WADA, O ;

MAKIUCHI, M ;

NAKAI, K .

APPLIED PHYSICS LETTERS, 1986, 48 (21) :1461-1463

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