MONOLITHIC INTEGRATION OF A PIN PHOTODIODE AND A FIELD-EFFECT TRANSISTOR USING A NEW FABRICATION TECHNIQUE - GRADED STEP PROCESS

被引：19

作者：

MIURA, S

MACHIDA, H

WADA, O

NAKAI, K

SAKURAI, T

机构：

[1] Fujitsu Ltd, Atsugi, Jpn, Fujitsu Ltd, Atsugi, Jpn

来源：

关键词：

D O I：

10.1063/1.95587

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：389 / 391

页数：3

共 9 条

[1] Carney J. K., 1983, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1983, P48
[2] Kim M. E., 1983, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1983, P44
[3] LEHNY RF, 1980, ELECTRON LETT, V16, P353
[4] A MONOLITHICALLY INTEGRATED ALGAAS/GAAS P-I-N/FET PHOTORECEIVER BY MOCVD
MIURA, S
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ITO, M
MAKIUCHI, M
NAKAI, K
SAKURAI, T
[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) : 375 - 376
[5] NAKAI K, UNPUB J CRYST GROWTH
[6] NISHI H, 1981, INT S GAAS RELATED C, P365
[7] MONOLITHIC INTEGRATION OF AN ALGAAS/GAAS MULTIQUANTUM WELL LASER AND GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS ON A SEMI-INSULATING GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY
SANADA, T
YAMAKOSHI, S
WADA, O
FUJII, T
SAKURAI, T
SASAKI, M
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (03) : 325 - 327
[8] MONOLITHIC INTEGRATION OF A PHOTO-DIODE AND A FIELD-EFFECT TRANSISTOR ON A GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY
WADA, O
MIURA, S
ITO, M
FUJII, T
SAKURAI, T
HIYAMIZU, S
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (04) : 380 - 382
[9] HIGH RADIANCE INGAASP-INP LENSED LEDS FOR OPTICAL COMMUNICATION-SYSTEMS AT 1.2-1.3 MU-M
WADA, O
YAMAKOSHI, S
ABE, M
NISHITANI, Y
SAKURAI, T
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 174 - 178