MAGNETIC-FIELD DEPENDENCE OF VALLEY SPLITTING IN N-TYPE INVERTED SILICON MOSFET SURFACES

被引：10

作者：

KOEHLER, H

ROOS, M

LANDWEHR, G

机构：

来源：

SOLID STATE COMMUNICATIONS | 1978年 / 27卷 / 10期

关键词：

D O I：

10.1016/0038-1098(78)91014-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：955 / 959

页数：5

共 11 条

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[8] THEORY OF VALLEY SPLITTING IN AN N-CHANNEL (100) INVERSION LAYER OF SI .3. ENHANCEMENT OF SPLITTINGS BY MANY-BODY EFFECTS [J].

OHKAWA, FJ ;

UEMURA, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (03) :925-932

[9] THEORY OF VALLEY SPLITTING IN AN N-CHANNEL (100) INVERSION LAYER OF SI .2. ELECTRIC BREAK THROUGH [J].

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