BREAKDOWN OF THE SEMICLASSICAL DESCRIPTION OF HOT-ELECTRON DYNAMICS IN SIO2

被引：9

作者：

EKLUND, EA

MCFEELY, FR

CARTIER, E

机构：

[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.69.1407

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Soft-x-ray photoemission measurements of the bulk Si 2p core level in Si/SiO2 overlayer structures show that hot-electron transport in SiO2 is essentially independent of temperature between 300 and 980 K. These results reveal a basic failure of the semiclassical Monte Carlo formalism to correctly model the strong electron-phonon interaction in SiO2 at electron energies > 6 eV. The experimental data are shown to be consistent with the trends seen in quantum Monte Carlo transport calculations.

引用

页码：1407 / 1410

页数：4

共 19 条

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