TRAP CREATION IN SILICON DIOXIDE PRODUCED BY HOT-ELECTRONS

[1] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1196 - 1198

[2] COMMON ORIGIN FOR ELECTRON AND HOLE TRAPS IN MOS DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) : 2535 - 2539

[3] TEMPERATURE EFFECTS ON ELECTRON TRAP GENERATION AND OCCUPATION IN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2700 - 2703

[4] CURRENT INDUCED TRAP GENERATION IN SIO2 [J]. APPLIED PHYSICS LETTERS, 1982, 40 (05) : 396 - 398

[5] DEGRADATION OF METAL-OXIDE SEMICONDUCTOR STRUCTURES BY FOWLER-NORDHEIM TUNNELING INJECTION [J]. THIN SOLID FILMS, 1987, 148 (02) : 149 - 162

[6] DIRECT MEASUREMENT OF THE ENERGY-DISTRIBUTION OF HOT-ELECTRONS IN SILICON DIOXIDE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1302 - 1313

[7] DETECTION OF HOT ELECTRON-INDUCED RADIATION-DAMAGE IN ORGANIC DIELECTRICS BY EXOELECTRON EMISSION FROM THIN-FILMS [J]. IEEE TRANSACTIONS ON ELECTRICAL INSULATION, 1987, 22 (02): : 123 - 128

[8] TRANSPORT AND RELAXATION OF HOT CONDUCTION ELECTRONS IN AN ORGANIC DIELECTRIC [J]. PHYSICAL REVIEW B, 1986, 34 (12): : 8822 - 8827

[9] ELECTRON-TRAP GENERATION BY RECOMBINATION OF ELECTRONS AND HOLES IN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) : 4544 - 4548

[10] DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]

[1] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1196 - 1198

[2] COMMON ORIGIN FOR ELECTRON AND HOLE TRAPS IN MOS DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) : 2535 - 2539

[3] TEMPERATURE EFFECTS ON ELECTRON TRAP GENERATION AND OCCUPATION IN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2700 - 2703

[4] CURRENT INDUCED TRAP GENERATION IN SIO2 [J]. APPLIED PHYSICS LETTERS, 1982, 40 (05) : 396 - 398

[5] DEGRADATION OF METAL-OXIDE SEMICONDUCTOR STRUCTURES BY FOWLER-NORDHEIM TUNNELING INJECTION [J]. THIN SOLID FILMS, 1987, 148 (02) : 149 - 162

[6] DIRECT MEASUREMENT OF THE ENERGY-DISTRIBUTION OF HOT-ELECTRONS IN SILICON DIOXIDE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1302 - 1313

[7] DETECTION OF HOT ELECTRON-INDUCED RADIATION-DAMAGE IN ORGANIC DIELECTRICS BY EXOELECTRON EMISSION FROM THIN-FILMS [J]. IEEE TRANSACTIONS ON ELECTRICAL INSULATION, 1987, 22 (02): : 123 - 128

[8] TRANSPORT AND RELAXATION OF HOT CONDUCTION ELECTRONS IN AN ORGANIC DIELECTRIC [J]. PHYSICAL REVIEW B, 1986, 34 (12): : 8822 - 8827

[9] ELECTRON-TRAP GENERATION BY RECOMBINATION OF ELECTRONS AND HOLES IN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) : 4544 - 4548

[10] DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]