CURRENT INDUCED TRAP GENERATION IN SIO2

被引：47

作者：

BADIHI, A

EITAN, B

COHEN, I

SHAPPIR, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 05期

关键词：

D O I：

10.1063/1.93115

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：396 / 398

页数：3

相关论文

共 12 条

[1] ELECTRON TRAPPING IN ELECTRON-BEAM IRRADIATED SIO2 [J].

AITKEN, JM ;

YOUNG, DR ;

PAN, K .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3386-3391

[2] ION-IMPLANTATION EFFECTS IN NONCRYSTALLINE SIO2 [J].

ARNOLD, GW .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (06) :220-223

[3] LOW-LEVEL CURRENTS IN INSULATED GATE FIELD-EFFECT TRANSISTORS [J].

BARRON, MB .

SOLID-STATE ELECTRONICS, 1972, 15 (03) :293-+

[4] CHARGE INJECTION INTO SIO2 FROM REVERSE-BIASED JUNCTIONS [J].

BOSSELAA.CA .

SOLID-STATE ELECTRONICS, 1973, 16 (05) :648-651

[5]

EITAN B, UNPUB

[6] EFFECTS OF PROCESSING ON RADIATION-DAMAGE IN SIO2 [J].

GDULA, RA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :644-647

[7] DIELECTRIC-BREAKDOWN IN ELECTRICALLY STRESSED THIN-FILMS OF THERMAL SIO2 [J].

HARARI, E .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2478-2489

[8]

JENQ CS, 1977, THESIS

[9] REMOVAL OF RADIATION-INDUCED ELECTRON TRAPS IN MOS STRUCTURES BY RF ANNEALING [J].

MA, TP ;

CHIN, MR .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :81-84

[10] NONAVALANCHE INJECTION OF HOT CARRIERS INTO SIO2 [J].

VERWEY, JF .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) :2681-2687