EFFECTS OF PROCESSING ON RADIATION-DAMAGE IN SIO2

This paper briefly reviews the general interaction of radiation with thermally grown SiO2 both phenomenologically and atomistically. Radiation-induced trapped charge, the creation of fast surface states, and the all-important neutral electron traps are discussed. The types of radiation and their concomitant damage produced by the typical processes of ion implantation, reactive ion etching, and electron-beam lithography are outlined. The effect of these processes on the oxidized silicon system is treated, and process modification to minimize radiation damage is discussed. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.