EFFECTS OF OXIDE THICKNESS AND SUBSTRATE DOPANTS ON IRRADIATED MOS CAPACITORS

被引：5

作者：

HALLER, WR

SHARE, S

EPSTEIN, AS

KUMAR, V

DAHLKE, WE

机构：

[1] HARRY DIAMOND LABS,ADELPHI,MD 20783

[2] LEHIGH UNIV,BETHLEHEM,PA 18015

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 04期

关键词：

D O I：

10.1149/1.2132881

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：578 / 579

页数：2

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