EFFECTS OF IONIZING-RADIATION ON THIN-OXIDE (20-1500 A) MOS CAPACITORS

被引：19

作者：

SHARE, S

EPSTEIN, AS

KUMAR, V

DAHLKE, WE

HALLER, W

机构：

[1] HARRY DIAMOND LABS, WASHINGTON, DC 20438 USA

[2] LEHIGH UNIV, BETHLEHEM, PA 18015 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 11期

关键词：

D O I：

10.1063/1.1663150

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4894 / 4898

页数：5

共 14 条

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