FREQUENCY-RESPONSE OF SURFACE STATE ADMITTANCE IN WEAKLY INVERTED THIN SIO2-SI MOS CAPACITORS

被引：17

作者：

KATTO, H

SAH, CT

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1972年 / 13卷 / 02期

关键词：

D O I：

10.1002/pssa.2210130210

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：417 / +

页数：1

相关论文

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