THIN-OXIDE MOS CAPACITANCE STUDIES OF FAST SURFACE STATES

被引：21

作者：

HUNTER, WR

EATON, DH

SAH, CT

机构：

来源：

APPLIED PHYSICS LETTERS | 1970年 / 17卷 / 05期

关键词：

D O I：

10.1063/1.1653369

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：211 / &

相关论文

共 12 条

[1] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON
BARBER, HD
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1039 - &
[2] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS
BROWN, DM
GRAY, PV
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) : 760 - +
[3] CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES
DEAL, BE
MACKENNA, EL
CASTRO, PL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) : 997 - &
[4] GOETZBERGER A, 1968, IEEE T ELECTRON DEVI, VED15, P1009
[5] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
BROWN, DM
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &
[6] SILICON-SILICON DIOXIDE SYSTEM
GRAY, PV
[J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1543 - +
[7] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
DEAL, BE
SNOW, EH
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +
[8] A FLOATING GATE AND ITS APPLICATION TO MEMORY DEVICES
KAHNG, D
SZE, SM
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1288 - +
[9] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
NICOLLIA.EH
GOETZBER.A
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +
[10] EXACT ANALYTICAL SOLUTION OF HIGH FREQUENCY LOSSLESS MOS CAPACITANCE-VOLTAGE CHARACTERISTICS AND VALIDITY OF CHARGE ANALYSIS
SAH, CT
PIERRET, RF
TOLE, AB
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (09) : 681 - +