GAMMA AND VACUUM ULTRAVIOLET IRRADIATIONS OF ION-IMPLANTED SIO2 FOR MOS DIELECTRICS

被引：18

作者：

EMMS, CG

HOLMESSIEDLE, AG

GROOMBRIDGE, I

BOSNELL, JR

机构：

[1] GEC, HIRST RES CTR, WEMBLEY, ENGLAND

[2] UNIV READING, JJ THOMSON PHYS LAB, READING, ENGLAND

[3] ROY RADAR ESTAB, MALVERN, ENGLAND

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1974年 / NS21卷 / 06期

关键词：

D O I：

10.1109/TNS.1974.6498922

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：159 / 166

页数：8

共 21 条

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[9] OXIDE CHARGE TRAPPING INDUCED BY ION-IMPLANTATION IN SIO2 [J].

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[10]

HOLMESSIEDLE AG, UNPUBLISHED WORK

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