POSITIVE CHARGE TRAPS IN SILICON DIOXIDE FILMS - COMPARISON OF POPULATION BY X-RAYS AND BAND-GAP LIGHT

被引：14

作者：

HOLMESSIEDLE, AG ^{[1
]}

GROOMBRIDGE, I ^{[1
]}

机构：

[1] UNIV READING, JJ THOMSON PHYS LAB, READING RG6 2AF, BERKSHIRE, ENGLAND

来源：

THIN SOLID FILMS | 1975年 / 27卷 / 01期

关键词：

D O I：

10.1016/0040-6090(75)90019-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：165 / 170

页数：6

共 15 条

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