MEASURED RADIATION EFFECTS IN MOS CAPACITORS WITH A PROPOSED NEW MODEL

被引：4

作者：

HOLMSTROM, FE ^{[1
]}

COLLINS, TW ^{[1
]}

CHURCHILL, JN ^{[1
]}

机构：

[1] IBM CORP, GEN PROD DIV, SAN JOSE, CA 95193 USA

来源：

关键词：

D O I：

10.1063/1.1655013

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：464 / 466

页数：3

共 5 条

[1] EFFECTS OF IONIZING RADIATION ON MOS DEVICES [J].

ANDRE, B ;

BUXO, J ;

ESTEVE, D ;

MARTINOT, H .

BUXO, J ;

ESTEVE, D ;

ENEA, G ;

MARTINEZ, A .

[3]

COLLINS TW, 1973, THESIS U CALIFORNIA

[4] VACUUM ULTRAVIOLET RADIATION EFFECTS IN SIO2 [J].

POWELL, RJ ;

DERBENWICK, GF .

SNOW, EH ;

GROVE, AS ;

FITZGERALD, DJ .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (07) :1168-+