EFFECTS OF IONIZING RADIATION ON MOS DEVICES

被引：26

作者：

ANDRE, B

BUXO, J

ESTEVE, D

MARTINOT, H

机构：

[1] Laboratoire d'automatique et des ses Applications Spatiales, C.N.R.S.

来源：

SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 02期

关键词：

D O I：

10.1016/0038-1101(69)90121-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The properties of the space-charge region induced in the oxide film by ionizing radiation are studied. The experiments described show that a steady state is reached when either a constant gate-voltage or a constant drain voltage and current is maintained during irradiation. A model is suggested which assumes that the effects of irradiation are the creation of electron-hole pairs within the oxide and the injection of electrons from the cathode. © 1969.

引用

页码：123 / +

页数：1

共 18 条

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