IRRADIATION AND ANNEALING OF SILICON PLANAR TRANSISTORS

[1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[2] AUSHEILUNG VON STRAHLUNGSSCHADEN IN SI-TRANSISTOREN [J]. ZEITSCHRIFT FUR ANGEWANDTE MATHEMATIK UND PHYSIK, 1964, 15 (05): : 485 - &

[3] SOME EFFECTS OF FAST NEUTRON IRRADIATION ON CARRIER LIFETIMES IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (09) : 1437 - 1439

[4] BILGER H, 1961, HELV PHYS ACTA, V34, P909

[5] BLAIR RR, 1965, I ELECT ELECTRON ENG, VNS10, P35

[6] BRINKMAN JA, 1963, J PHYS SOC JAPAN S3, V18, P150

[7] Coppen P. J., 1962, IRE T ELECTRON DEV, V9, P75

[8] EASLEY JW, 1965, 7 P INT C PHYS SEM, P341

[9] GAMMA RAY IRRADIATION EFFECT ON THERMALLY OXIDIZED SI P-N JUNCTION [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (09) : 1521 - &

[10] EDAGAWA H, 1964, JPN J APPL PHYS, V3, P644

[1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[2] AUSHEILUNG VON STRAHLUNGSSCHADEN IN SI-TRANSISTOREN [J]. ZEITSCHRIFT FUR ANGEWANDTE MATHEMATIK UND PHYSIK, 1964, 15 (05): : 485 - &

[3] SOME EFFECTS OF FAST NEUTRON IRRADIATION ON CARRIER LIFETIMES IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (09) : 1437 - 1439

[4] BILGER H, 1961, HELV PHYS ACTA, V34, P909

[5] BLAIR RR, 1965, I ELECT ELECTRON ENG, VNS10, P35

[6] BRINKMAN JA, 1963, J PHYS SOC JAPAN S3, V18, P150

[7] Coppen P. J., 1962, IRE T ELECTRON DEV, V9, P75

[8] EASLEY JW, 1965, 7 P INT C PHYS SEM, P341

[9] GAMMA RAY IRRADIATION EFFECT ON THERMALLY OXIDIZED SI P-N JUNCTION [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (09) : 1521 - &

[10] EDAGAWA H, 1964, JPN J APPL PHYS, V3, P644