AUSHEILUNG VON STRAHLUNGSSCHADEN IN SI-TRANSISTOREN

[1] ANNEALING OF ELECTRON BOMBARDMENT DAMAGE IN SILICON CRYSTALS [J]. PHYSICAL REVIEW, 1957, 108 (03): : 645 - 648

[2] PARAMAGNETIC RESONANCE IN ELECTRON IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1195 - 1198

[3] A NEW PARAMAGNETIC CENTER IN ELECTRON IRRADIATED SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (01) : 1 - &

[4] BILGER H, 1961, HELV PHYS ACTA, V34, P909

[5] BRINKMAN JA, 1953, J PHYS SOC JAPAN S3, V18, P150

[6] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J]. PHYSICAL REVIEW, 1961, 121 (04): : 1015 - &

[7] INFRARED ABSORPTION AND PHOTOCONDUCTIVITY IN IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1127 - 1134

[8] INUISHI Y, 1961, J PHYS SOC JAPAN, V16, P339

[9] INUISHI Y, 1963, J PHYS SOC JAPAN S3, V18, P240

[10] ELECTRON SPIN RESONANCE IN NEUTRON-IRRADIATED SILICON [J]. PHYSICAL REVIEW, 1962, 128 (04): : 1605 - &

[1] ANNEALING OF ELECTRON BOMBARDMENT DAMAGE IN SILICON CRYSTALS [J]. PHYSICAL REVIEW, 1957, 108 (03): : 645 - 648

[2] PARAMAGNETIC RESONANCE IN ELECTRON IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1195 - 1198

[3] A NEW PARAMAGNETIC CENTER IN ELECTRON IRRADIATED SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (01) : 1 - &

[4] BILGER H, 1961, HELV PHYS ACTA, V34, P909

[5] BRINKMAN JA, 1953, J PHYS SOC JAPAN S3, V18, P150

[6] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J]. PHYSICAL REVIEW, 1961, 121 (04): : 1015 - &

[7] INFRARED ABSORPTION AND PHOTOCONDUCTIVITY IN IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1127 - 1134

[8] INUISHI Y, 1961, J PHYS SOC JAPAN, V16, P339

[9] INUISHI Y, 1963, J PHYS SOC JAPAN S3, V18, P240

[10] ELECTRON SPIN RESONANCE IN NEUTRON-IRRADIATED SILICON [J]. PHYSICAL REVIEW, 1962, 128 (04): : 1605 - &