AUSHEILUNG VON STRAHLUNGSSCHADEN IN SI-TRANSISTOREN

[11] SURFACE EFFECTS OF RADIATION ON TRANSISTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1963, 42 (01): : 95 - +

[12] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243

[13] SAITO H, 1963, J PHYS SOC JAPAN S3, V18, P246

[14] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489

[15] GAMMA IRRADIATION OF SILICON .2. LEVELS IN N-TYPE FLOAT-ZONE MATERIAL [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) : 3295 - &

[16] HALL EFFECT MEASUREMENT OF RADIATION DAMAGE + ANNEALING IN SI [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (02) : 167 - &

[17] SPIN RESONANCE IN ELECTRON IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1198 - 1203

[18] DEFECTS IN IRRADIATED SILICON .1. ELECTRON SPIN RESONANCE OF SI-A CENTER [J]. PHYSICAL REVIEW, 1961, 121 (04): : 1001 - &

[19] WATKINS GD, 1961, GENERAL DISCUSSIONS

[20] ELECTRON-BOMBARDMENT DAMAGE IN OXYGEN-FREE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1232 - 1234

[11] SURFACE EFFECTS OF RADIATION ON TRANSISTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1963, 42 (01): : 95 - +

[12] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243

[13] SAITO H, 1963, J PHYS SOC JAPAN S3, V18, P246

[14] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489

[15] GAMMA IRRADIATION OF SILICON .2. LEVELS IN N-TYPE FLOAT-ZONE MATERIAL [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) : 3295 - &

[16] HALL EFFECT MEASUREMENT OF RADIATION DAMAGE + ANNEALING IN SI [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (02) : 167 - &

[17] SPIN RESONANCE IN ELECTRON IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1198 - 1203

[18] DEFECTS IN IRRADIATED SILICON .1. ELECTRON SPIN RESONANCE OF SI-A CENTER [J]. PHYSICAL REVIEW, 1961, 121 (04): : 1001 - &

[19] WATKINS GD, 1961, GENERAL DISCUSSIONS

[20] ELECTRON-BOMBARDMENT DAMAGE IN OXYGEN-FREE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1232 - 1234