REMOVAL OF RADIATION-INDUCED ELECTRON TRAPS IN MOS STRUCTURES BY RF ANNEALING

被引：13

作者：

MA, TP

CHIN, MR

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 01期

关键词：

D O I：

10.1063/1.91283

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：81 / 84

页数：4

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