TRAP CREATION IN SILICON DIOXIDE PRODUCED BY HOT-ELECTRONS

被引：506

作者：

DIMARIA, DJ

STASIAK, JW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.342824

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2342 / 2356

页数：15

相关论文

共 80 条

[11] LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING
DIMARIA, DJ
WEINBERG, ZA
AITKEN, JM
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 898 - 906
[12] ELECTRON HEATING STUDIES IN SILICON DIOXIDE - LOW FIELDS AND THICK-FILMS
DIMARIA, DJ
FISCHETTI, MV
ARIENZO, M
TIERNEY, E
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1719 - 1726
[13] DETERMINATION OF INSULATOR BULK TRAPPED CHARGE-DENSITIES AND CENTROIDS FROM PHOTOCURRENT-VOLTAGE CHARACTERISTICS OF MOS STRUCTURES
DIMARIA, DJ
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4073 - 4077
[14] ELECTRON HEATING IN SILICON-NITRIDE AND SILICON OXYNITRIDE FILMS
DIMARIA, DJ
ABERNATHEY, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1727 - 1729
[15] DIRECT OBSERVATION OF THE THRESHOLD FOR ELECTRON HEATING IN SILICON DIOXIDE
DIMARIA, DJ
FISCHETTI, MV
TIERNEY, E
BRORSON, SD
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (12) : 1284 - 1286
[16] VACUUM EMISSION OF HOT-ELECTRONS FROM SILICON DIOXIDE AT LOW-TEMPERATURES
DIMARIA, DJ
FISCHETTI, MV
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) : 4683 - 4691
[17] CHARGE TRANSPORT AND TRAPPING PHENOMENA IN OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS
DIMARIA, DJ
DONG, DW
FALCONY, C
THEIS, TN
KIRTLEY, JR
TSANG, JC
YOUNG, DR
PESAVENTO, FL
BRORSON, SD
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 5801 - 5827
[18] DIRECT OBSERVATION OF BALLISTIC ELECTRONS IN SILICON DIOXIDE
DIMARIA, DJ
FISCHETTI, MV
BATEY, J
DORI, L
TIERNEY, E
STASIAK, J
[J]. PHYSICAL REVIEW LETTERS, 1986, 57 (25) : 3213 - 3216
[19] CORRELATION OF TRAP CREATION WITH ELECTRON HEATING IN SILICON DIOXIDE
DIMARIA, DJ
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (09) : 655 - 657
[20] CAPTURE AND RELEASE OF ELECTRONS ON NA+-RELATED TRAPPING SITES IN THE SIO2 LAYER OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES AT TEMPERATURES BETWEEN 77-DEGREES-K AND 296-DEGREES-K
DIMARIA, DJ
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7251 - 7260

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