DIRECT OBSERVATION OF BALLISTIC ELECTRONS IN SILICON DIOXIDE

被引：31

作者：

DIMARIA, DJ

FISCHETTI, MV

BATEY, J

DORI, L

TIERNEY, E

STASIAK, J

机构：

来源：

PHYSICAL REVIEW LETTERS | 1986年 / 57卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.57.3213

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：3213 / 3216

页数：4

共 21 条

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[3] LOW-TEMPERATURE DEPOSITION OF HIGH-QUALITY SILICON DIOXIDE BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

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[4] DIRECT MEASUREMENT OF THE ENERGY-DISTRIBUTION OF HOT-ELECTRONS IN SILICON DIOXIDE [J].

BRORSON, SD ;

DIMARIA, DJ ;

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SOLOMON, PM ;

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JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1302-1313

[5] ELECTRON HEATING STUDIES IN SILICON DIOXIDE - LOW FIELDS AND THICK-FILMS [J].

DIMARIA, DJ ;

FISCHETTI, MV ;

ARIENZO, M ;

TIERNEY, E .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1719-1726

[6] DIRECT OBSERVATION OF THE THRESHOLD FOR ELECTRON HEATING IN SILICON DIOXIDE [J].

DIMARIA, DJ ;

FISCHETTI, MV ;

TIERNEY, E ;

BRORSON, SD .

PHYSICAL REVIEW LETTERS, 1986, 56 (12) :1284-1286

[7] ELECTRON HEATING IN SILICON DIOXIDE AND OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS [J].

DIMARIA, DJ ;

THEIS, TN ;

KIRTLEY, JR ;

PESAVENTO, FL ;

DONG, DW ;

BRORSON, SD .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1214-1238

[8] MONTE-CARLO SOLUTION TO THE PROBLEM OF HIGH-FIELD ELECTRON HEATING IN SIO2 [J].

FISCHETTI, MV .

PHYSICAL REVIEW LETTERS, 1984, 53 (18) :1755-1758

[9] THEORY OF HIGH-FIELD ELECTRON-TRANSPORT IN SILICON DIOXIDE [J].

FISCHETTI, MV ;

DIMARIA, DJ ;

BRORSON, SD ;

THEIS, TN ;

KIRTLEY, JR .

PHYSICAL REVIEW B, 1985, 31 (12) :8124-8142

[10] QUANTUM MONTE-CARLO SIMULATION OF HIGH-FIELD ELECTRON-TRANSPORT - AN APPLICATION TO SILICON DIOXIDE [J].

FISCHETTI, MV ;

DIMARIA, DJ .

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