VACUUM EMISSION OF HOT-ELECTRONS FROM SILICON DIOXIDE AT LOW-TEMPERATURES

被引：38

作者：

DIMARIA, DJ

FISCHETTI, MV

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 09期

关键词：

D O I：

10.1063/1.341252

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4683 / 4691

页数：9

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[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS
ANDO, T
FOWLER, AB
STERN, F
[J]. REVIEWS OF MODERN PHYSICS, 1982, 54 (02) : 437 - 672
[2] EFFECT OF POST-OXIDATION ANNEAL ON ULTRATHIN SIO2 GATE OXIDES
ARIENZO, M
DORI, L
SZABO, TN
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (16) : 1040 - 1042
[3] DIRECT MEASUREMENT OF THE ENERGY-DISTRIBUTION OF HOT-ELECTRONS IN SILICON DIOXIDE
BRORSON, SD
DIMARIA, DJ
FISCHETTI, MV
PESAVENTO, FL
SOLOMON, PM
DONG, DW
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1302 - 1313
[4] ELECTRON HEATING STUDIES IN SILICON DIOXIDE - LOW FIELDS AND THICK-FILMS
DIMARIA, DJ
FISCHETTI, MV
ARIENZO, M
TIERNEY, E
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1719 - 1726
[5] CHARGE TRAPPING STUDIES IN SIO2 USING HIGH-CURRENT INJECTION FROM SI-RICH SIO2-FILMS
DIMARIA, DJ
GHEZ, R
DONG, DW
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4830 - 4841
[6] ELECTRON HEATING IN SILICON-NITRIDE AND SILICON OXYNITRIDE FILMS
DIMARIA, DJ
ABERNATHEY, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1727 - 1729
[7] DIRECT OBSERVATION OF THE THRESHOLD FOR ELECTRON HEATING IN SILICON DIOXIDE
DIMARIA, DJ
FISCHETTI, MV
TIERNEY, E
BRORSON, SD
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (12) : 1284 - 1286
[8] HIGH-CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2-FILMS AND EXPERIMENTAL APPLICATIONS
DIMARIA, DJ
DONG, DW
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2722 - 2735
[9] DIRECT OBSERVATION OF BALLISTIC ELECTRONS IN SILICON DIOXIDE
DIMARIA, DJ
FISCHETTI, MV
BATEY, J
DORI, L
TIERNEY, E
STASIAK, J
[J]. PHYSICAL REVIEW LETTERS, 1986, 57 (25) : 3213 - 3216
[10] ELECTRON HEATING IN SILICON DIOXIDE AND OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS
DIMARIA, DJ
THEIS, TN
KIRTLEY, JR
PESAVENTO, FL
DONG, DW
BRORSON, SD
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) : 1214 - 1238