ELECTRON HEATING IN SILICON-NITRIDE AND SILICON OXYNITRIDE FILMS

被引：29

作者：

DIMARIA, DJ ^{[1
]}

ABERNATHEY, JR ^{[1
]}

机构：

[1] IBM CORP,DIV GEN TECHNOL,ESSEX JUNCTION,VT 05452

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 05期

关键词：

D O I：

10.1063/1.337265

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1727 / 1729

页数：3

共 23 条

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[3] DIRECT MEASUREMENT OF THE ENERGY-DISTRIBUTION OF HOT-ELECTRONS IN SILICON DIOXIDE
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[5] DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]
[6] ELECTROLUMINESCENCE STUDIES IN SILICON DIOXIDE FILMS CONTAINING TINY SILICON ISLANDS
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[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 401 - 416
[7] CONDUCTION STUDIES IN SILICON-NITRIDE - DARK CURRENTS AND PHOTOCURRENTS
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[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1977, 21 (03) : 227 - 244
[8] CHARGE TRANSPORT AND TRAPPING PHENOMENA IN OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS
DIMARIA, DJ
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[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 5801 - 5827
[9] HIGH-CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2-FILMS AND EXPERIMENTAL APPLICATIONS
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[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2722 - 2735
[10] ELECTRON HEATING IN SILICON DIOXIDE AND OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS
DIMARIA, DJ
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) : 1214 - 1238

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