CHARGE TRANSPORT AND TRAPPING PHENOMENA IN OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS

被引：96

作者：

DIMARIA, DJ ^{[1
]}

DONG, DW ^{[1
]}

FALCONY, C ^{[1
]}

THEIS, TN ^{[1
]}

KIRTLEY, JR ^{[1
]}

TSANG, JC ^{[1
]}

YOUNG, DR ^{[1
]}

PESAVENTO, FL ^{[1
]}

BRORSON, SD ^{[1
]}

机构：

[1] MIT, CAMBRIDGE, MA 02139 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 10期

关键词：

D O I：

10.1063/1.331806

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5801 / 5827

页数：27

共 51 条

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