EFFECT OF POST-OXIDATION ANNEAL ON ULTRATHIN SIO2 GATE OXIDES

[1] A 2-STEP OXIDATION PROCESS TO IMPROVE THE ELECTRICAL BREAKDOWN PROPERTIES OF THIN OXIDES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1900 - 1903

[2] GENERALIZED GUIDE FOR MOSFET MINIATURIZATION [J]. ELECTRON DEVICE LETTERS, 1980, 1 (01): : 2 - 4

[3] HOLE TRAPPING AND BREAKDOWN IN THIN SIO2 [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 164 - 167

[4] CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957

[5] ELECTRICAL-PROPERTIES OF POST-ANNEALED THIN SIO2-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) : 929 - 932

[6] ELECTRON HEATING IN SILICON DIOXIDE AND OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) : 1214 - 1238

[7] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 685 - 687

[8] THE EFFECTS OF WATER ON OXIDE AND INTERFACE TRAPPED CHARGE GENERATION IN THERMAL SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5665 - 5682

[9] GENERATION OF POSITIVE CHARGE IN SILICON DIOXIDE DURING AVALANCHE AND TUNNEL ELECTRON INJECTION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2860 - 2879

[10] MODEL FOR THE GENERATION OF POSITIVE CHARGE AT THE SI-SIO2 INTERFACE BASED ON HOT-HOLE INJECTION FROM THE ANODE [J]. PHYSICAL REVIEW B, 1985, 31 (04) : 2099 - 2113

[1] A 2-STEP OXIDATION PROCESS TO IMPROVE THE ELECTRICAL BREAKDOWN PROPERTIES OF THIN OXIDES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1900 - 1903

[2] GENERALIZED GUIDE FOR MOSFET MINIATURIZATION [J]. ELECTRON DEVICE LETTERS, 1980, 1 (01): : 2 - 4

[3] HOLE TRAPPING AND BREAKDOWN IN THIN SIO2 [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 164 - 167

[4] CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957

[5] ELECTRICAL-PROPERTIES OF POST-ANNEALED THIN SIO2-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) : 929 - 932

[6] ELECTRON HEATING IN SILICON DIOXIDE AND OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) : 1214 - 1238

[7] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 685 - 687

[8] THE EFFECTS OF WATER ON OXIDE AND INTERFACE TRAPPED CHARGE GENERATION IN THERMAL SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5665 - 5682

[9] GENERATION OF POSITIVE CHARGE IN SILICON DIOXIDE DURING AVALANCHE AND TUNNEL ELECTRON INJECTION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2860 - 2879

[10] MODEL FOR THE GENERATION OF POSITIVE CHARGE AT THE SI-SIO2 INTERFACE BASED ON HOT-HOLE INJECTION FROM THE ANODE [J]. PHYSICAL REVIEW B, 1985, 31 (04) : 2099 - 2113