ELECTRICAL-PROPERTIES OF POST-ANNEALED THIN SIO2-FILMS

[1] THE GROWTH AND CHARACTERIZATION OF VERY THIN SILICON DIOXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : 1787 - 1794

[2] ALINGER FJ, 1966, J MATER SCI, V1, P1

[3] EVIDENCE FOR SURFACE ASPERITY MECHANISM OF CONDUCTIVITY IN OXIDE GROWN ON POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4834 - 4836

[4] EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) : 1287 - +

[5] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +

[6] BARRIER INHOMOGENEITIES ON A SI-SIO2 INTERFACE BY SCANNING INTERNAL PHOTOEMISSION [J]. APPLIED PHYSICS LETTERS, 1971, 19 (08) : 280 - &

[7] FRITZSCHE C, 1967, Z ANGEW PHYSIK, V24, P48

[8] SILICON-SILICON DIOXIDE SYSTEM [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1543 - +

[9] SILICON OXIDATION STUDIES - SOME ASPECTS OF INITIAL OXIDATION REGIME [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) : 1708 - 1714

[10] MECHANISM OF SELF-HEALING ELECTRICAL BREAKDOWN IN MOS STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) : 788 - +

[1] THE GROWTH AND CHARACTERIZATION OF VERY THIN SILICON DIOXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : 1787 - 1794

[2] ALINGER FJ, 1966, J MATER SCI, V1, P1

[3] EVIDENCE FOR SURFACE ASPERITY MECHANISM OF CONDUCTIVITY IN OXIDE GROWN ON POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4834 - 4836

[4] EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) : 1287 - +

[5] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +

[6] BARRIER INHOMOGENEITIES ON A SI-SIO2 INTERFACE BY SCANNING INTERNAL PHOTOEMISSION [J]. APPLIED PHYSICS LETTERS, 1971, 19 (08) : 280 - &

[7] FRITZSCHE C, 1967, Z ANGEW PHYSIK, V24, P48

[8] SILICON-SILICON DIOXIDE SYSTEM [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1543 - +

[9] SILICON OXIDATION STUDIES - SOME ASPECTS OF INITIAL OXIDATION REGIME [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) : 1708 - 1714

[10] MECHANISM OF SELF-HEALING ELECTRICAL BREAKDOWN IN MOS STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) : 788 - +