MODEL FOR THE GENERATION OF POSITIVE CHARGE AT THE SI-SIO2 INTERFACE BASED ON HOT-HOLE INJECTION FROM THE ANODE

被引：107

作者：

FISCHETTI, MV

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.31.2099

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2099 / 2113

页数：15

共 56 条

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