CORRELATION OF TRAP CREATION WITH ELECTRON HEATING IN SILICON DIOXIDE

被引：54

作者：

DIMARIA, DJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 09期

关键词：

D O I：

10.1063/1.98324

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：655 / 657

页数：3

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[1] CURRENT INDUCED TRAP GENERATION IN SIO2
BADIHI, A
EITAN, B
COHEN, I
SHAPPIR, J
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (05) : 396 - 398
[2] DIRECT MEASUREMENT OF THE ENERGY-DISTRIBUTION OF HOT-ELECTRONS IN SILICON DIOXIDE
BRORSON, SD
DIMARIA, DJ
FISCHETTI, MV
PESAVENTO, FL
SOLOMON, PM
DONG, DW
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1302 - 1313
[3] LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING
DIMARIA, DJ
WEINBERG, ZA
AITKEN, JM
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 898 - 906
[4] ELECTRON HEATING STUDIES IN SILICON DIOXIDE - LOW FIELDS AND THICK-FILMS
DIMARIA, DJ
FISCHETTI, MV
ARIENZO, M
TIERNEY, E
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1719 - 1726
[5] DETERMINATION OF INSULATOR BULK TRAPPED CHARGE-DENSITIES AND CENTROIDS FROM PHOTOCURRENT-VOLTAGE CHARACTERISTICS OF MOS STRUCTURES
DIMARIA, DJ
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4073 - 4077
[6] DIRECT OBSERVATION OF THE THRESHOLD FOR ELECTRON HEATING IN SILICON DIOXIDE
DIMARIA, DJ
FISCHETTI, MV
TIERNEY, E
BRORSON, SD
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (12) : 1284 - 1286
[7] CHARGE TRANSPORT AND TRAPPING PHENOMENA IN OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS
DIMARIA, DJ
DONG, DW
FALCONY, C
THEIS, TN
KIRTLEY, JR
TSANG, JC
YOUNG, DR
PESAVENTO, FL
BRORSON, SD
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 5801 - 5827
[8] DIRECT OBSERVATION OF BALLISTIC ELECTRONS IN SILICON DIOXIDE
DIMARIA, DJ
FISCHETTI, MV
BATEY, J
DORI, L
TIERNEY, E
STASIAK, J
[J]. PHYSICAL REVIEW LETTERS, 1986, 57 (25) : 3213 - 3216
[9] ELECTRON HEATING IN SILICON DIOXIDE AND OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS
DIMARIA, DJ
THEIS, TN
KIRTLEY, JR
PESAVENTO, FL
DONG, DW
BRORSON, SD
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) : 1214 - 1238
[10] PARAMETER DEPENDENCE OF RIE INDUCED RADIATION-DAMAGE IN SILICON DIOXIDE
EPHRATH, LM
DIMARIA, DJ
PESAVENTO, FL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (11) : 2415 - 2419