PARAMETER DEPENDENCE OF RIE INDUCED RADIATION-DAMAGE IN SILICON DIOXIDE

[1] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1196 - 1198

[2] ELECTRON TRAPPING IN ELECTRON-BEAM IRRADIATED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3386 - 3391

[3] RECENT ADVANCES IN HYDROGENATED AMORPHOUS SILICON [J]. THIN SOLID FILMS, 1978, 54 (02) : 159 - 159

[4] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) : 1873 - &

[5] DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]

[6] LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 898 - 906

[7] DETERMINATION OF INSULATOR BULK TRAPPED CHARGE-DENSITIES AND CENTROIDS FROM PHOTOCURRENT-VOLTAGE CHARACTERISTICS OF MOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4073 - 4077

[8] CONDUCTION STUDIES IN SILICON-NITRIDE - DARK CURRENTS AND PHOTOCURRENTS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1977, 21 (03) : 227 - 244

[9] RADIATION-DAMAGE IN SILICON DIOXIDE FILMS EXPOSED TO REACTIVE ION ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4015 - 4021

[10] MOS AVALANCHE AND TUNNELING EFFECTS IN SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) : 4582 - +

[1] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1196 - 1198

[2] ELECTRON TRAPPING IN ELECTRON-BEAM IRRADIATED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3386 - 3391

[3] RECENT ADVANCES IN HYDROGENATED AMORPHOUS SILICON [J]. THIN SOLID FILMS, 1978, 54 (02) : 159 - 159

[4] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) : 1873 - &

[5] DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]

[6] LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 898 - 906

[7] DETERMINATION OF INSULATOR BULK TRAPPED CHARGE-DENSITIES AND CENTROIDS FROM PHOTOCURRENT-VOLTAGE CHARACTERISTICS OF MOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4073 - 4077

[8] CONDUCTION STUDIES IN SILICON-NITRIDE - DARK CURRENTS AND PHOTOCURRENTS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1977, 21 (03) : 227 - 244

[9] RADIATION-DAMAGE IN SILICON DIOXIDE FILMS EXPOSED TO REACTIVE ION ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4015 - 4021

[10] MOS AVALANCHE AND TUNNELING EFFECTS IN SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) : 4582 - +