PARAMETER DEPENDENCE OF RIE INDUCED RADIATION-DAMAGE IN SILICON DIOXIDE

[11] PHOTOEMISSION OF ELECTRONS FROM SILICON AND GOLD INTO SILICON DIOXIDE [J]. PHYSICAL REVIEW, 1966, 144 (02): : 588 - &

[12] GROVE AS, 1967, PHYS TECHNOL S, pCH9

[13] 1 MU-M MOSFET VLSI TECHNOLOGY .5. SINGLE-LEVEL POLYSILICON TECHNOLOGY USING ELECTRON-BEAM LITHOGRAPHY [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 275 - 281

[14] EFFECTS OF TRACE AMOUNTS OF WATER ON THERMAL OXIDATION OF SILICON IN OXYGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) : 1613 - 1616

[15] APPLICATION OF RF DISCHARGES TO SPUTTERING [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 168 - &

[16] AVALANCHE INJECTION OF ELECTRONS INTO INSULATING SIO2 USING MOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 3052 - +

[17] ELECTRON TRAPPING IN SIO2 DUE TO ELECTRON-BEAM DEPOSITION OF ALUMINUM [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 4077 - 4082

[18] PHOTOINJECTION STUDIES OF CHARGE DISTRIBUTIONS IN OXIDES OF MOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4390 - &

[19] Ryden W. D., 1976, Electrochemical society spring meeting. (Extended abstracts only received), P149

[20] SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH9

[11] PHOTOEMISSION OF ELECTRONS FROM SILICON AND GOLD INTO SILICON DIOXIDE [J]. PHYSICAL REVIEW, 1966, 144 (02): : 588 - &

[12] GROVE AS, 1967, PHYS TECHNOL S, pCH9

[13] 1 MU-M MOSFET VLSI TECHNOLOGY .5. SINGLE-LEVEL POLYSILICON TECHNOLOGY USING ELECTRON-BEAM LITHOGRAPHY [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 275 - 281

[14] EFFECTS OF TRACE AMOUNTS OF WATER ON THERMAL OXIDATION OF SILICON IN OXYGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) : 1613 - 1616

[15] APPLICATION OF RF DISCHARGES TO SPUTTERING [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 168 - &

[16] AVALANCHE INJECTION OF ELECTRONS INTO INSULATING SIO2 USING MOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 3052 - +

[17] ELECTRON TRAPPING IN SIO2 DUE TO ELECTRON-BEAM DEPOSITION OF ALUMINUM [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 4077 - 4082

[18] PHOTOINJECTION STUDIES OF CHARGE DISTRIBUTIONS IN OXIDES OF MOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4390 - &

[19] Ryden W. D., 1976, Electrochemical society spring meeting. (Extended abstracts only received), P149

[20] SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH9