CAPTURE AND RELEASE OF ELECTRONS ON NA+-RELATED TRAPPING SITES IN THE SIO2 LAYER OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES AT TEMPERATURES BETWEEN 77-DEGREES-K AND 296-DEGREES-K

被引：26

作者：

DIMARIA, DJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 12期

关键词：

D O I：

10.1063/1.328711

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：7251 / 7260

页数：10

相关论文

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