COMMON ORIGIN FOR ELECTRON AND HOLE TRAPS IN MOS DEVICES

[1] ELECTRON TRAPPING IN ELECTRON-BEAM IRRADIATED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3386 - 3391

[2] ELECTRON SELF-TRAPPING IN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (01) : 159 - 162

[3] NATURE OF ELECTRON AND HOLE TRAPS IN MOS SYSTEMS WITH POLY-SI ELECTRODE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 84 (02): : 659 - 668

[4] ASLAM M, IN PRESS

[5] ASLAM M, 1983, INSULATING FILMS SEM

[6] BALK P, 1984, SOLID STATE ELECTRON, V27, P709, DOI 10.1016/0038-1101(84)90019-4

[7] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +

[8] ELECTRICAL-PROPERTIES OF POST-ANNEALED THIN SIO2-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) : 929 - 932

[9] CAPTURE AND EMISSION OF ELECTRONS AT 2.4-EV-DEEP TRAP LEVEL IN SIO2-FILMS [J]. PHYSICAL REVIEW B, 1975, 11 (12): : 5023 - 5030

[10] DIMARIA DJ, 1975, J APPL PHYS, V46, P1216

[1] ELECTRON TRAPPING IN ELECTRON-BEAM IRRADIATED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3386 - 3391

[2] ELECTRON SELF-TRAPPING IN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (01) : 159 - 162

[3] NATURE OF ELECTRON AND HOLE TRAPS IN MOS SYSTEMS WITH POLY-SI ELECTRODE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 84 (02): : 659 - 668

[4] ASLAM M, IN PRESS

[5] ASLAM M, 1983, INSULATING FILMS SEM

[6] BALK P, 1984, SOLID STATE ELECTRON, V27, P709, DOI 10.1016/0038-1101(84)90019-4

[7] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +

[8] ELECTRICAL-PROPERTIES OF POST-ANNEALED THIN SIO2-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) : 929 - 932

[9] CAPTURE AND EMISSION OF ELECTRONS AT 2.4-EV-DEEP TRAP LEVEL IN SIO2-FILMS [J]. PHYSICAL REVIEW B, 1975, 11 (12): : 5023 - 5030

[10] DIMARIA DJ, 1975, J APPL PHYS, V46, P1216