COMMON ORIGIN FOR ELECTRON AND HOLE TRAPS IN MOS DEVICES

被引：29

作者：

ASLAM, M ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN, D-5100 AACHEN, FED REP GER

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 12期

关键词：

D O I：

10.1109/T-ED.1987.23345

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：2535 / 2539

页数：5

相关论文

共 21 条

[11] DIMARIA DJ, 1978, PHYSICS SIO2 ITS INT
[12] DEFECT STRUCTURE AND GENERATION OF INTERFACE STATES IN MOS STRUCTURES
DOTHANH, L
ASLAM, M
BALK, P
[J]. SOLID-STATE ELECTRONICS, 1986, 29 (08) : 829 - 840
[13] IDENTIFICATION OF ELECTRON TRAPS IN THERMAL SILICON DIOXIDE FILMS
HARTSTEIN, A
YOUNG, DR
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 631 - 633
[14] LAI SK, 1981, SEMICONDUCTOR SILICO, P416
[15] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2
LENZLINGER, M
SNOW, EH
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 278 - +
[16] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2
NICOLLIAN, EH
GOETZBERGER, A
BERGLUND, CN
[J]. APPLIED PHYSICS LETTERS, 1969, 15 (06) : 174 - +
[17] THERMAL REEMISSION OF TRAPPED ELECTRONS IN SIO2
NING, TH
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 5997 - 6003
[18] GENERATION-ANNEALING KINETICS AND ATOMIC MODELS OF A COMPENSATING DONOR IN THE SURFACE SPACE-CHARGE LAYER OF OXIDIZED SILICON
SAH, CT
SUN, JYC
TZOU, JJT
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 944 - 956
[19] PHOTOEMISSION OF ELECTRONS FROM SILICON INTO SILICON DIOXIDE
WILLIAMS, R
[J]. PHYSICAL REVIEW, 1965, 140 (2A): : A569 - &
[20] ELECTRON TRAPPING IN SIO2 AT 295 AND 77-DEGREES-K
YOUNG, DR
IRENE, EA
DIMARIA, DJ
DEKEERSMAECKER, RF
MASSOUD, HZ
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6366 - 6372