ELECTRON TRAPPING IN SIO2 AT 295 AND 77-DEGREES-K

被引：220

作者：

YOUNG, DR ^{[1
]}

IRENE, EA ^{[1
]}

DIMARIA, DJ ^{[1
]}

DEKEERSMAECKER, RF ^{[1
]}

MASSOUD, HZ ^{[1
]}

机构：

[1] STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 10期

关键词：

DIELECTRIC MATERIALS - SEMICONDUCTOR DEVICES; MIS;

D O I：

10.1063/1.325727

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electron trapping behavior of SiO2 has been measured as a function of thickness at 295 and 77 °K. The devices used were metal-oxide-semiconductor devices with the SiO2 grown thermally. The results indicate bulk traps are dominant at 295 °K and traps associated with the Si-SiO2 interface are dominant at 77 °K. The effect of processing conditions was also studied and the optimum conditions are different for the two temperatures used for the measurements. These observations have been verified using a photo I-V technique. The generation of donor states in the SiO2 near the Si-SiO2 interface was observed as a result of the electron current through the SiO2.

引用

页码：6366 / 6372

页数：7

共 12 条

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