ELECTRON SELF-TRAPPING IN SIO2

[1] AVALANCHE INJECTION OF HOLES INTO SIO2 [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2128 - 2134

[2] Aslam M., 1983, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 83, P103

[3] ASLAM M, 1984, SOLID STATE ELECTRON, V27, P709

[4] ASLAM M, 1983, THESIS TH AACHEN W G

[5] DIMARIA DJ, 1976, J APPL PHYS, V49, P3386

[6] LOCAL ATOMIC AND ELECTRONIC-STRUCTURE OF OXIDE-GAAS AND SIO2-SI INTERFACES USING HIGH-RESOLUTION XPS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1443 - 1453

[7] HARTSTEIN A, 1981, APPL PHYS LETT, V38, P638

[8] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1969, 15 (06) : 174 - +

[9] AVALANCHE INJECTION OF ELECTRONS INTO INSULATING SIO2 USING MOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 3052 - +

[10] THERMAL REEMISSION OF TRAPPED ELECTRONS IN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 5997 - 6003

[1] AVALANCHE INJECTION OF HOLES INTO SIO2 [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2128 - 2134

[2] Aslam M., 1983, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 83, P103

[3] ASLAM M, 1984, SOLID STATE ELECTRON, V27, P709

[4] ASLAM M, 1983, THESIS TH AACHEN W G

[5] DIMARIA DJ, 1976, J APPL PHYS, V49, P3386

[6] LOCAL ATOMIC AND ELECTRONIC-STRUCTURE OF OXIDE-GAAS AND SIO2-SI INTERFACES USING HIGH-RESOLUTION XPS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1443 - 1453

[7] HARTSTEIN A, 1981, APPL PHYS LETT, V38, P638

[8] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1969, 15 (06) : 174 - +

[9] AVALANCHE INJECTION OF ELECTRONS INTO INSULATING SIO2 USING MOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 3052 - +

[10] THERMAL REEMISSION OF TRAPPED ELECTRONS IN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 5997 - 6003