LOCAL ATOMIC AND ELECTRONIC-STRUCTURE OF OXIDE-GAAS AND SIO2-SI INTERFACES USING HIGH-RESOLUTION XPS

被引：345

作者：

GRUNTHANER, FJ ^{[1
]}

GRUNTHANER, PJ ^{[1
]}

VASQUEZ, RP ^{[1
]}

LEWIS, BF ^{[1
]}

MASERJIAN, J ^{[1
]}

MADHUKAR, A ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT PHYS & MAT SCI,LOS ANGELES,CA 90007

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期

关键词：

D O I：

10.1116/1.570218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1443 / 1453

页数：11

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