ELECTRON-TRAP GENERATION BY RECOMBINATION OF ELECTRONS AND HOLES IN SIO2

[1] 1 MU-M MOSFET VLSI TECHNOLOGY .8. RADIATION EFFECTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 372 - 379

[2] CURRENT INDUCED TRAP GENERATION IN SIO2 [J]. APPLIED PHYSICS LETTERS, 1982, 40 (05) : 396 - 398

[3] HOLE TRAPPING AND BREAKDOWN IN THIN SIO2 [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 164 - 167

[4] CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957

[5] SUBSTRATE HOLE CURRENT AND OXIDE BREAKDOWN [J]. APPLIED PHYSICS LETTERS, 1986, 49 (11) : 669 - 671

[6] RADIATION-DAMAGE IN SILICON DIOXIDE FILMS EXPOSED TO REACTIVE ION ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4015 - 4021

[7] USE OF ELECTRON-TRAPPING REGION TO REDUCE LEAKAGE CURRENTS AND IMPROVE BREAKDOWN CHARACTERISTICS OF MOS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1977, 31 (10) : 680 - 682

[8] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 685 - 687

[9] DIELECTRIC-BREAKDOWN IN ELECTRICALLY STRESSED THIN-FILMS OF THERMAL SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2478 - 2489

[10] COMPARISON OF HIGH-FIELD STRESS EFFECTS IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES WITH ALUMINUM AND POLYCRYSTALLINE SILICON GATES USING INTERNAL PHOTOEMISSION MEASUREMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (10) : 3936 - 3939

[1] 1 MU-M MOSFET VLSI TECHNOLOGY .8. RADIATION EFFECTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 372 - 379

[2] CURRENT INDUCED TRAP GENERATION IN SIO2 [J]. APPLIED PHYSICS LETTERS, 1982, 40 (05) : 396 - 398

[3] HOLE TRAPPING AND BREAKDOWN IN THIN SIO2 [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 164 - 167

[4] CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957

[5] SUBSTRATE HOLE CURRENT AND OXIDE BREAKDOWN [J]. APPLIED PHYSICS LETTERS, 1986, 49 (11) : 669 - 671

[6] RADIATION-DAMAGE IN SILICON DIOXIDE FILMS EXPOSED TO REACTIVE ION ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4015 - 4021

[7] USE OF ELECTRON-TRAPPING REGION TO REDUCE LEAKAGE CURRENTS AND IMPROVE BREAKDOWN CHARACTERISTICS OF MOS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1977, 31 (10) : 680 - 682

[8] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 685 - 687

[9] DIELECTRIC-BREAKDOWN IN ELECTRICALLY STRESSED THIN-FILMS OF THERMAL SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2478 - 2489

[10] COMPARISON OF HIGH-FIELD STRESS EFFECTS IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES WITH ALUMINUM AND POLYCRYSTALLINE SILICON GATES USING INTERNAL PHOTOEMISSION MEASUREMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (10) : 3936 - 3939