TEMPERATURE EFFECTS ON ELECTRON TRAP GENERATION AND OCCUPATION IN SIO2

[1] PERFORMANCE AND HOT-CARRIER EFFECTS OF SMALL CRYO-CMOS DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (01) : 8 - 18

[2] OXIDE TRAPPING UNDER SPATIALLY-VARIABLE OXIDE ELECTRIC-FIELD IN THE METAL-OXIDE-SILICON STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1987, 51 (06) : 463 - 465

[3] TRAP GENERATION AND OCCUPATION IN STRESSED GATE OXIDES UNDER SPATIALLY-VARIABLE OXIDE ELECTRIC-FIELD [J]. APPLIED PHYSICS LETTERS, 1987, 51 (22) : 1857 - 1859

[4] BALK P, 1984, SOLID STATE ELECTRON, V27, P709, DOI 10.1016/0038-1101(84)90019-4

[5] RECOMBINATION MECHANISMS [J]. PHYSICA STATUS SOLIDI, 1968, 29 (01): : 9 - +

[6] HOLE TRAPPING AND BREAKDOWN IN THIN SIO2 [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 164 - 167

[7] FEIGL FJ, 1976, THERMAL PHOTOSTIMULA, P118

[8] SLOW AND FAST STATES INDUCED BY HOT-ELECTRONS AT SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3136 - 3144

[9] VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 218 - 229

[10] DIELECTRIC-BREAKDOWN IN ELECTRICALLY STRESSED THIN-FILMS OF THERMAL SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2478 - 2489

[1] PERFORMANCE AND HOT-CARRIER EFFECTS OF SMALL CRYO-CMOS DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (01) : 8 - 18

[2] OXIDE TRAPPING UNDER SPATIALLY-VARIABLE OXIDE ELECTRIC-FIELD IN THE METAL-OXIDE-SILICON STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1987, 51 (06) : 463 - 465

[3] TRAP GENERATION AND OCCUPATION IN STRESSED GATE OXIDES UNDER SPATIALLY-VARIABLE OXIDE ELECTRIC-FIELD [J]. APPLIED PHYSICS LETTERS, 1987, 51 (22) : 1857 - 1859

[4] BALK P, 1984, SOLID STATE ELECTRON, V27, P709, DOI 10.1016/0038-1101(84)90019-4

[5] RECOMBINATION MECHANISMS [J]. PHYSICA STATUS SOLIDI, 1968, 29 (01): : 9 - +

[6] HOLE TRAPPING AND BREAKDOWN IN THIN SIO2 [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 164 - 167

[7] FEIGL FJ, 1976, THERMAL PHOTOSTIMULA, P118

[8] SLOW AND FAST STATES INDUCED BY HOT-ELECTRONS AT SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3136 - 3144

[9] VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 218 - 229

[10] DIELECTRIC-BREAKDOWN IN ELECTRICALLY STRESSED THIN-FILMS OF THERMAL SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2478 - 2489