OXIDE TRAPPING UNDER SPATIALLY-VARIABLE OXIDE ELECTRIC-FIELD IN THE METAL-OXIDE-SILICON STRUCTURE

被引：13

作者：

AVNI, E

SHAPPIR, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 06期

关键词：

D O I：

10.1063/1.98423

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：463 / 465

页数：3

共 9 条

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