HIGH-FIELD AND CURRENT-INDUCED POSITIVE CHARGE IN THERMAL SIO2 LAYERS

被引：106

作者：

NISSANCOHEN, Y ^{[1
]}

SHAPPIR, J ^{[1
]}

FROHMANBENTCHKOWSKY, D ^{[1
]}

机构：

[1] HEBREW UNIV JERUSALEM,SCH APPL SCI & TECHNOL,DIV APPL PHYS,JERUSALEM,ISRAEL

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 08期

关键词：

D O I：

10.1063/1.335219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2830 / 2839

页数：10

共 39 条

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[3] BREED DJ, 1974, SOLID STATE ELECTRON, V17, P1229, DOI 10.1016/0038-1101(74)90002-1
[4] DETERMINATION OF INSULATOR BULK TRAPPED CHARGE-DENSITIES AND CENTROIDS FROM PHOTOCURRENT-VOLTAGE CHARACTERISTICS OF MOS STRUCTURES
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[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4073 - 4077
[5] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN
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[6] DIELECTRIC INSTABILITY AND BREAKDOWN IN SIO2 THIN-FILMS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01): : 50 - 54
[7] DIELECTRIC INSTABILITY AND BREAKDOWN IN WIDE BANDGAP INSULATORS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 37 - 46
[8] ELECTRON TRAPPING IN SIO2 - AN INJECTION MODE DEPENDENT PHENOMENON
EITAN, B
FROHMANBENTCHKOWSKY, D
SHAPPIR, J
BALOG, M
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 523 - 525
[9] THE EFFECTS OF WATER ON OXIDE AND INTERFACE TRAPPED CHARGE GENERATION IN THERMAL SIO2-FILMS
FEIGL, FJ
YOUNG, DR
DIMARIA, DJ
LAI, S
CALISE, J
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5665 - 5682
[10] ELECTRON-TRANSPORT AND BREAKDOWN IN SIO2
FERRY, DK
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1422 - 1427

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