NEW MODEL FOR NEGATIVE VOLTAGE INSTABILITY IN MOS DEVICES

被引：32

作者：

BREED, DJ ^{[1
]}

机构：

[1] PHILLIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 03期

关键词：

D O I：

10.1063/1.88085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：116 / 118

页数：3

相关论文

共 8 条

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