STUDY OF SI-SIO2 INTERFACE STATE WITH NEGATIVE BIAS-HEAT TREATMENT APPROACH

被引：8

作者：

KOBAYASHI, I ^{[1
]}

NAKAHARA, M ^{[1
]}

ATSUMI, M ^{[1
]}

机构：

[1] FUJITSU LTD, IC ENGN DEPT, HYOGO, KOBE, JAPAN

来源：

PROCEEDINGS OF THE IEEE | 1973年 / 61卷 / 02期

关键词：

D O I：

10.1109/PROC.1973.9019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：249 / 250

页数：2

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SNOW, EH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +
[2] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
BROWN, DM
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &
[3] INVESTIGATION OF SILICON-SILICON DIOXIDE INTERFACE USING MOS STRUCTURE
MIURA, Y
MATUKURA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (02) : 180 - &
[4] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
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GOETZBER.A
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +