DIELECTRIC INSTABILITY AND BREAKDOWN IN WIDE BANDGAP INSULATORS

被引：48

作者：

DISTEFANO, TH

SHATZKES, M

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] IBM CORP,SYST PROD DIV,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1975年 / 12卷 / 01期

关键词：

D O I：

10.1116/1.568797

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：37 / 46

页数：10

相关论文

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