HIGH-FIELD CURRENT INDUCED-POSITIVE CHARGE TRANSIENTS IN SIO2

被引:68
作者
NISSANCOHEN, Y
SHAPPIR, J
FROHMANBENTCHKOWSKY, D
机构
关键词
D O I
10.1063/1.331805
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:5793 / 5800
页数:8
相关论文
共 36 条
  • [1] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES
    AITKEN, JM
    YOUNG, DR
    [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1196 - 1198
  • [2] CURRENT INDUCED TRAP GENERATION IN SIO2
    BADIHI, A
    EITAN, B
    COHEN, I
    SHAPPIR, J
    [J]. APPLIED PHYSICS LETTERS, 1982, 40 (05) : 396 - 398
  • [3] RECOMBINATION MECHANISMS
    BONCH-BRUEVICH, VL
    LANDSBERG, EG
    [J]. PHYSICA STATUS SOLIDI, 1968, 29 (01): : 9 - +
  • [4] NEW MODEL FOR NEGATIVE VOLTAGE INSTABILITY IN MOS DEVICES
    BREED, DJ
    [J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 116 - 118
  • [5] BREED DJ, 1974, SOLID STATE ELECTRON, V17, P1229, DOI 10.1016/0038-1101(74)90002-1
  • [6] HOLE AND ELECTRON-TRANSPORT IN SIO2-FILMS
    CURTIS, OL
    SROUR, JR
    CHIU, KY
    [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4506 - 4513
  • [7] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN
    DISTEFANO, TH
    SHATZKES, M
    [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 685 - 687
  • [8] DIELECTRIC INSTABILITY AND BREAKDOWN IN SIO2 THIN-FILMS
    DISTEFANO, TH
    SHATZKES, M
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01): : 50 - 54
  • [9] DIELECTRIC INSTABILITY AND BREAKDOWN IN WIDE BANDGAP INSULATORS
    DISTEFANO, TH
    SHATZKES, M
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 37 - 46
  • [10] ELECTRON TRAPPING IN SIO2 - AN INJECTION MODE DEPENDENT PHENOMENON
    EITAN, B
    FROHMANBENTCHKOWSKY, D
    SHAPPIR, J
    BALOG, M
    [J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 523 - 525