INVESTIGATION OF THE SIO2-INDUCED SUBSTRATE CURRENT IN SILICON FIELD-EFFECT TRANSISTORS

被引：56

作者：

WEINBERG, ZA

FISCHETTI, MV

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 02期

关键词：

D O I：

10.1063/1.334771

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：443 / 451

页数：9

共 44 条

[1]

ASLAM M, SOLID STATE ELECTRON

[2]

Chang C., 1983, International Electron Devices Meeting 1983. Technical Digest, P194

[3] ELECTRICAL-PROPERTIES OF POST-ANNEALED THIN SIO2-FILMS [J].

COHEN, SS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) :929-932

[4] LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING [J].

DIMARIA, DJ ;

WEINBERG, ZA ;

AITKEN, JM .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :898-906

[5] CHARGE TRAPPING STUDIES IN SIO2 USING HIGH-CURRENT INJECTION FROM SI-RICH SIO2-FILMS [J].

DIMARIA, DJ ;

GHEZ, R ;

DONG, DW .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4830-4841

[6] CHARGE TRANSPORT AND TRAPPING PHENOMENA IN OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS [J].

DIMARIA, DJ ;

DONG, DW ;

FALCONY, C ;

THEIS, TN ;

KIRTLEY, JR ;

TSANG, JC ;

YOUNG, DR ;

PESAVENTO, FL ;

BRORSON, SD .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :5801-5827

[7] HIGH-CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2-FILMS AND EXPERIMENTAL APPLICATIONS [J].

DIMARIA, DJ ;

DONG, DW .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2722-2735

[8]

DIMARIA DJ, UNPUB J APPL PHYS

[9] 2 COMPONENTS OF TUNNELING CURRENT IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

EITAN, B ;

KOLODNY, A .

APPLIED PHYSICS LETTERS, 1983, 43 (01) :106-108

[10]

EITAN B, COMMUNICATION

← 1 2 3 4 5 →