INVESTIGATION OF THE SIO2-INDUCED SUBSTRATE CURRENT IN SILICON FIELD-EFFECT TRANSISTORS

被引：56

作者：

WEINBERG, ZA

FISCHETTI, MV

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 02期

关键词：

D O I：

10.1063/1.334771

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：443 / 451

页数：9

共 44 条

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